Method of fabricating a gate

摘要

A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate. The method includes planarizing a top surface of the conductive layer and forming a gate electrode by patterning the insulation layer and the conductive layer.

主权项

1. A method of fabricating a gate, the method comprising:
forming a device isolation layer in a substrate, a top surface of the device isolation layer being higher than a top surface of the substrate; sequentially forming a first layer and a second layer on substantially an entirety of the substrate including the device isolation layer, the second layer having a stepped surface on the substrate, the stepped surface overlapping the device isolation layer; planarizing the second layer such that the stepped surface is removed; and forming a plurality of stacked structures spaced apart on the substrate, after planarizing the second layer by patterning the first layer and the second layer to form a plurality of patterned first layers and a plurality of patterned second layers, at least one of the plurality of patterned second layers being on the device isolation layer, a top surface of each of the plurality of patterned second layers being arranged at a same distance from the substrate.