发明名称 Method of manufacturing semiconductor device
摘要 A focus through a projection lens is corrected to prevent the occurrence of a dimensional error in a pattern due to defocusing. At least one automatic focus correction mark is formed over each of chip patterns formed in a reticle used for exposure. Using one of the automatic focus correction marks located in the center portion of an actual device region, automatic correction of the focus of exposure light is performed. In this manner, a variation in the focus of the exposure light through the center portion of the projection lens, which is more likely to reach a high temperature than an end portion of the projection lens, is detected and corrected.
申请公布号 US8748198(B2) 申请公布日期 2014.06.10
申请号 US201213524075 申请日期 2012.06.15
申请人 Renesas Electronics Corporation 发明人 Teramoto Naoyuki;Fukazawa Megumu;Kumashiro Masayuki;Kawagashira Kiyoshi
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising the steps of: (a) preparing a reticle having a plurality of chip patterns in an actual device region thereof, and including a first alignment mark in a center portion of the actual device region; (b) preparing a semiconductor substrate; (c) forming an object to be processed in the semiconductor substrate; (d) forming a photoresist film over the object to be processed; and (e) exposing the photoresist film to light using the reticle, wherein the first alignment mark is formed in one of a plurality of scribe lines disposed so as to surround each of the chip patterns.
地址 Kawasaki-shi JP