Method for epitaxial devices

摘要

Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

主权项

1. A method of forming a light emitting diode device, comprising:
applying a block copolymer to a silicon surface; organizing the block copolymer into a substantially regular pattern; selectively etching the silicon surface of using the regular pattern of the organized block copolymer as a mask to form a corresponding textured surface of the substrate; forming epitaxial gallium nitride on the textured surface, wherein a geometry of the textured surface reduces a lattice mismatch between the epitaxial gallium nitride and the silicon surface; and forming a P-N junction within the gallium nitride to provide a desired wavelength of light.