| 发明名称 |
Non-uniform semiconductor device active area pattern formation |
| 摘要 |
In accordance with an embodiment, a semiconductor device comprises at least three active areas. The at least three active areas are proximate. Longitudinal axes of the at least three active areas are parallel, and each of the at least three active areas comprises an edge intersecting the longitudinal axis of the respective active area. The edges of the at least three active areas form an arc. |
| 申请公布号 |
US8747992(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201313917180 |
申请日期 |
2013.06.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lee Tsung-Lin;Yu Shao-Ming |
| 分类号 |
D06N7/00 |
主分类号 |
D06N7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising at least three active areas, wherein the at least three active areas are proximate, wherein longitudinal axes of the at least three active areas are parallel, wherein each of the at least three active areas comprises an edge intersecting the longitudinal axis of the respective active area, and wherein the edges of the at least three active areas form an arc.
|
| 地址 |
Hsin-Chu TW |
