发明名称 Memory system and refresh control method thereof
摘要 A memory system and a refresh control method thereof are provided. The memory system includes a semiconductor memory device including a plurality of memory cells and a memory controller configured to generate a special command for searching for refresh information stored in the semiconductor memory device and to control a refresh operation of the semiconductor memory device. The semiconductor memory device is configured to output the refresh information to the memory controller in response to the special command generated by the memory controller.
申请公布号 US8750068(B2) 申请公布日期 2014.06.10
申请号 US201213477300 申请日期 2012.05.22
申请人 Samsung Electronics Co., Ltd. 发明人 Cho Geun Hee
分类号 G11C7/00;G11C11/401;G11C11/406 主分类号 G11C7/00
代理机构 代理人
主权项 1. A memory system comprising: a semiconductor memory device including a plurality of memory cells; and a memory controller configured to generate a special command for searching for refresh information stored in the semiconductor memory device and to control a refresh operation of the semiconductor memory device, wherein the semiconductor memory device is configured to output the refresh information to the memory controller in response to the special command generated by the memory controller, and wherein the memory controller includes, a command generator configured to generate the special command for searching for the refresh information corresponding to the semiconductor memory device before generating commands for controlling other operations of the semiconductor memory device;a memory register storage device configured to store the refresh information output from the semiconductor memory device;a pulse generator configured to generate and output a refresh pulse corresponding to the refresh information in response to a refresh command generated by the command generator; andan address counter configured to sequentially generate a row address for selecting a word line connected with a memory cell to be refreshed among the plurality of memory cells in response to the refresh pulse.
地址 Gyeonggi-do KR