Method for manufacturing a tunneling field effect transistor with a U-shaped channel

摘要

The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.

主权项

1. A method for manufacturing a tunneling field effect transistor with a U-shaped channel, wherein it comprises the following steps:
provide a semiconductor substrate; form a first doping region of a first doping type in the semiconductor substrate; form a first kind of insulation film on the semiconductor substrate; etch the first kind of insulation film and the semiconductor substrate to form a pattern; deposit a second kind of insulation film and etch the second kind of insulation film to form a sidewall and expose the substrate; form a third kind of insulation film on the substrate exposed through oxidation; remove the second kind of insulation film; etch the substrate along exposed sidewalls of the first and third kinds of insulation film to form a groove; cover the groove with a fourth kind of insulation film; cover the fourth kind of insulation film with a first kind of conductive film; etch the first kind of conductive film to form a device gate conductive layer; cover the gate conductive layer with a gate protection layer; etch the fourth and third kinds of insulation film to expose the substrate; etch the substrate exposed to form a region for subsequent development; form a second doping region of the first doping type in the semiconductor substrate; cover the second doping region of the first doping type with a fifth kind of insulation film; cover the fifth kind of insulation film with a conductive material to form a source region of a second doping type; etch the gate protection layer to form a gate sidewall; deposit a sixth kind of insulation film to form a device passivation layer; etch the sixth kind of insulation film to form a contact hole; deposit a second kind of conductive film and etch the second kind of conductive film to form an electrode.