In-situ measurement of feature dimensions

摘要

Methods and systems are provided for fabricating a semiconductor device. An exemplary method involves forming a feature of a semiconductor device in a first region of a layer of material on a semiconductor substrate and forming a test structure in a second region of the layer of material. The test structure is formed concurrently to forming the feature, and a dimension of the feature is determined using the test structure.

主权项

1. A method for fabricating a semiconductor device comprising:
forming a feature of the semiconductor device in a first region of a layer of material on a semiconductor substrate; forming a test structure in a second region of the layer, the test structure being formed concurrently to forming the feature; and determining a dimension of the feature using the test structure, wherein determining the dimension comprises:
signaling a source to emit a reference signal, the test structure modifying the reference signal to produce a modulated signal; andestimating the dimension of the feature based on the modulated signal.