Semiconductor device and method of fabricating the same

摘要

A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.

主权项

1. A semiconductor device, comprising:
a substrate; a metal interconnection line formed on the substrate; an interlayer dielectric formed on the metal interconnection line; and a via hole penetrating the interlayer dielectric and exposing a portion of the metal interconnection line, and having a triple profile in which an upper portion of the via hole has a wet etch profile, a middle portion of the via hole has a high selectivity dry etch profile, and a lower portion of the via hole has a high etch rate dry etch profile and a taper angle in a range of about 30° to about 70°.