Substrate support having dynamic temperature control

摘要

A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer member includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.

主权项

1. A reaction chamber of a plasma processing apparatus comprising:
a substrate support comprising a ceramic member, a metallic heat transfer member overlying the ceramic member, the heat transfer member having a maximum thickness of about ¼ inch, the heat transfer member including at least one flow passage through which a liquid can be circulated to heat and cool the heat transfer member; and an electrostatic chuck overlying the heat transfer member, the electrostatic chuck having a support surface for supporting a substrate in a reaction chamber of a plasma processing apparatus; a vacuum pumping apparatus which maintains the chamber at a desired pressure during processing of substrates; a gas supply supplying process gas to the chamber; an elastomeric joint between the heat transfer member and the electrostatic chuck; an elastomeric joint of elastomer polymer between the ceramic member and the heat transfer member which thermally isolates the heat transfer member from the ceramic member; and a controller operable to control volumetric flow rate and/or temperature of the liquid circulated through the at least one flow passage; wherein the at least one flow passage has a width of about 1/32 to about 3/32 inch, and a depth of about 1/32 to about 1/16 inch.