| 摘要 |
A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device 10 includes a target holder 14 provided in a vacuum container 11, a substrate holder 15 facing the target holder 14, a means 19 for introducing a plasma generation gas into the vacuum container 11, a means 161 for generating an electric field for sputtering in a region including a surface of a target T, an antenna placement room 182 provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window 183, and a radio-frequency antenna 13, which is provided in the antenna placement room 182, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder. |
