| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently determining a mask pattern and exposure conditions capable of forming a pattern on a substrate with high precision.SOLUTION: This determination method comprises: a step S102 of setting an evaluation position at which an image of a pattern is evaluated on an image surface of a projection optical system and an evaluation item at the evaluation position; a step S104 of setting a first parameter for defining a shape of a mask pattern; a step S103 of setting a second parameter for defining an effective light source distribution; and steps S105-S109 of repeating a process of calculating a value of the evaluation item by calculating an image of the mask pattern by changing a value of each parameter, thereby determining a mask pattern and an effective light source distribution on the basis of the result of calculation. In step S104, parameters of a plurality of pattern elements are collectively set as one parameter, using an index value based on an index indicating an effect of adjacent patterns on the image of the evaluation position in the mask pattern. |
