| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-performance semiconductor light-emitting element which uniformly emits light as a whole, has high luminous efficiency and excellent reliability, and is low in manufacturing cost.SOLUTION: The semiconductor light-emitting element includes: a semiconductor structure layer made of an AlGaInP-based semiconductor, which comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode 23 formed on part of the first semiconductor layer; and a second electrode formed on part of the second semiconductor layer. The second electrode includes power supply wiring 21 and a wiring electrode 19 which forms an ohmic junction with the second semiconductor layer. A counter electrode 25 is formed on the first semiconductor layer in a region which faces, across the semiconductor structure layer, a region where the power supply wiring is formed. Either a pair of the power supply wiring and the second semiconductor layer or a pair of the counter electrode and the first semiconductor layer form an ohmic junction, and the other pair form a Schottky junction. The second semiconductor layer includes a current diffusion layer. When the electrical resistivity of the current diffusion layer isρand the layer thickness thereof is d, a relation ofρ/d≤600 [Ω] is satisfied.</p> |
