PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE PATTERN FORMING METHOD, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method which permits formation of a fine isolated line pattern, dot pattern or the like that is difficult to form by a conventional positive pattern forming method, and which gives a pattern having sufficient etching durability, and to provide a resist pattern formed by the method, and a method for manufacturing an electronic device and an electronic device using the above pattern forming method.SOLUTION: The pattern forming method includes the following steps (1) to (5): (1) a step of forming a film of an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin (A) which shows increase in the polarity by an action of an acid to decrease solubility with a developing solution containing an organic solvent; (2) a step of exposing the film; (3) a step of forming a negative pattern by developing the film with a developing solution containing an organic solvent; (4) a step of forming a resist film for pattern reversal on the negative pattern; and (5) a step of reversing the negative pattern into a positive pattern by removing a residual film part in the negative pattern by using an alkaline wet etching solution.