发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method capable of minimizing density reduction of plasma by utilizing afterglow discharge.SOLUTION: A plasma processing apparatus includes a processing chamber for processing a sample, a first high frequency power supply supplying first high frequency power for plasma generation into the processing chamber, a second high frequency power supply supplying second high frequency power to a sample table for mounting a sample, and a pulse generator generating a first pulse for time modulating the first high frequency power and a second pulse for time modulating the second high frequency power. The pulse generator includes a control unit for controlling the first pulse and second pulse so that the frequency of the first pulse is higher than that of the second pulse, and the on period of the second pulse is included in the on period of the first pulse.
申请公布号 JP2014107363(A) 申请公布日期 2014.06.09
申请号 JP20120258086 申请日期 2012.11.27
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KANAZAWA SHUNSUKE;YASUI HISATERU;MORIMOTO MICHIKAZU;OGOSHI YASUO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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