| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a general-purpose semiconductor device manufacturing method which can prevent the occurrence of voids even when a size of a semiconductor chip, a type and a size of a bump electrode, a wiring width, a pitch, a level difference and the like of a wiring board are different from each other.SOLUTION: In a semiconductor device manufacturing method of joining a surface of a semiconductor chip on a bump electrode side with a surface of a wiring board on an insulating resin sheet side, to which the insulating resin sheet is attached on a pad electrode side of the wiring board, and electrically connecting the bump electrodes and the pad electrodes by application of heat and pressure, when assuming that displacement of the semiconductor chip with respect to the wiring board when the bump electrodes contact the insulating resin sheet and application of pressure starts is 0, displacement when the displacement becomes constant is d and a temperature at which a time (represented as t) from the start of application of pressure until reaching displacement 0.8d becomes minimum is T(T<250°C), the application of heat and pressure is performed at a temperature (T) which satisfies t(T)≤t(T)≤3 t(T).</p> |
