| 摘要 |
The invention relates to a method for forming a graphene layer (105) on the surface of a substrate (100) including a silicon layer (101), the method comprising the consecutive steps of: forming (1) a silicon-carbide film (103) on a free surface of the silicon layer and gradually heating the substrate until the silicon of at least the first row of atoms of the silicon-carbide film is sublimated so as to form the graphene layer on the silicon-carbide film. According to the invention, a silicon layer, the free surface of which is stepped, is used. |
