| 摘要 |
A manufacturing method of a light emitting diode and a photomask for the same are provided. Firstly, provided is a substrate with a high defect density region disposed regularly and repeatedly, and a low defect density region with a lower defect density than the defect density of the high defect density region. A light emitting structure layer with an active layer is formed on the substrate. By patterning the light emitting structure layer, the light emitting structure layer formed on the low defect density region is defined as a normal element pattern, and the light emitting structure layer formed on the high defect density region is defined as a dummy element pattern. |
