THE MANUFACTURING METHOD OF LOW SURFACE ENERGY GATE DIELECTRICS

摘要

The present invention relates to a method for fabricating a gate insulating layer having low surface. As a subject matter of the present invention, the method for fabricating the gate insulating layer having the lower surface includes: a first step of producing a reactant by adding organic silane to silica particles distributed in a solvent to attach the organic silane to the surfaces of the silica particles; a second step of forming coatings by adding the organic silane to the reactant for networking between silicas having the surfaces with the organic silane attached thereto through the first step; and a third step of forming the gate insulating layer by coating the coatings formed through the second step on a substrate and performing heat treatment for the resultant at the temperature of 120°C to 400°C. The organic silane includes alkoxy group reacting with the silica particles and a side chain group participating in a reaction of forming the gate insulating layer of the silica. Accordingly, the gate insulating layer having low surface energy can be fabricated without an additional process such as a process of forming a self-assembled monolayer.