| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin injection electrode structure which inhibits spin scattering at a boundary surface cased by a shear of a lattice constant between a semiconductor channel layer and a tunnel layer, and a lattice constant between the tunnel layer and a ferromagnetic layer; and provide a spin conduction element.SOLUTION: In a spin injection electrode structure, a lattice constant of a tunnel layer on the side in contact with a semiconductor channel layer and a lattice constant of the tunnel layer on the side in contact with a ferromagnetic layer are different from each other and the tunnel layer in contact with the semiconductor channel layer and the tunnel layer in contact with the ferromagnetic layer have a single crystal structure. |
