| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a highly reliable semiconductor device in an easy bonding process.SOLUTION: A semiconductor device comprises: a mold layer 40 composed of a halogen-free resin material; electrode pads 12, 13 formed by an alloy consisting primarily of aluminum (Al) and containing copper (Cu); and a bonding wire 30 formed by an alloy consisting primarily of silver (Ag) and added with gold (Au) and palladium (Pd), in which it is preferable that an additive amount of Au is within a range of 5-20 wt.% and an additive amount of Pd is within a range of 3-15 wt.%. |
