发明名称 PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURING METHOD AND IMAGE CAPTURE ELEMENT MANUFACTURING METHOD
摘要 <p>The method produces a photoelectric conversion element comprising a lower electrode, an electron blocking layer, a photoelectric conversion layer, an upper electrode, and a sealing layer which are laminated on one another in this order. The method includes a step of forming a transparent conductive oxide into a film at a deposition rate of 0.5Å/s or higher by a sputtering method to form the upper electrode having a stress of−50 MPa to−500 MPa on the photoelectric conversion layer.</p>
申请公布号 KR20140068917(A) 申请公布日期 2014.06.09
申请号 KR20147005584 申请日期 2012.08.02
申请人 FUJIFILM CORPORATION 发明人 SUZUKI HIDEYUKI
分类号 H01L27/14;C09B23/00;H01L27/146;H01L51/05 主分类号 H01L27/14
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