<p>A method of forming an oxide semiconductor is provided. The method comprises a step of coating a substrate with an oxide semiconductor solution; a step of providing the substrate to an oxygen atom-containing gas atmosphere; and a step of forming the oxide semiconductor solution into an oxide semiconductor film by conducting a thermal treatment process at 300°C or less.</p>
申请公布号
KR20140068536(A)
申请公布日期
2014.06.09
申请号
KR20120136144
申请日期
2012.11.28
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;SNU R&DB FOUNDATION
发明人
RYU, HO JUN;HONG, YONG TAEK;JI, SEON BEOM;IM, HWA RIM