| 摘要 |
PROBLEM TO BE SOLVED: To provide a superlattice type phase change memory in which the resistance in low resistance state can be increased.SOLUTION: A phase change memory includes a first electrode 100, a second electrode 104 provided above the first electrode 100, and a phase change memory layer of superlattice structure sandwiched between the first electrode 100 and second electrode 104 and consisting of SbTelayers 103 and GeTe layers 102 deposited repeatedly. The phase change memory of superlattice structure has an SbTelayer 101 containing Zr, provided in contact with the first electrode 100. |
