SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element including transistors having threshold voltages different from each other.SOLUTION: A first transistor and a second transistor each comprises: a nano active region projecting from a substrate; a source region and a drain region on both ends of the nano active region; and a channel formation region between the source region and the drain region. The source region and the drain region of the first transistor have the same conductivity type with the source region and the drain region of the second transistor. The threshold voltage of the second transistor is lower than that of the first transistor. The channel formation region of the second transistor includes an impurity region of the same type and the same conductivity type with the source region and the drain region of the second transistor and of the same type and the different conductivity type from that of the channel formation region between the source region and the drain region of the first transistor.