METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To shorten the use time of an accelerator for forming an n layer.SOLUTION: A method for manufacturing a semiconductor device comprises: a step S10 of irradiating a substrate with a particle beam using an accelerator (irradiation step); and a step S12 of processing the substrate with plasma containing hydrogen to form an n layer on the substrate (plasma processing step). This method may include a step S14 of annealing the substrate after the plasma processing step (annealing step). The accelerator may be a circular accelerator or a linear accelerator. The particle beam may contain a light ion.