| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve conversion efficiency in a photoelectric conversion element and a method of manufacturing the same.SOLUTION: A photoelectric conversion element includes: an anode 2; a buffer layer 3 which is provided on the anode 2 and contains MoO; a photoelectric conversion layer 9 which is provided on the buffer layer 3 and contains a p-type organic semiconductor 6 using PCDTBT as a material, an n-type organic semiconductor 7, and a dopant 21a; and a cathode 21 provided on the photoelectric conversion layer 9. The concentration of the p-type organic semiconductor 6 in the photoelectric conversion layer 9 decreases from the anode 2 toward the cathode 21. The concentration of the dopant 21a in the photoelectric conversion layer 9 decreases from the anode 2 toward the cathode 21.</p> |
