| 摘要 |
<p>A method for forming a contact hole is provided. The contact hoe forming method comprises: forming a first conductive layer and a second conductive layer on a lower structure including a substrate; forming an insulating layer on the first conductive layer and the second conductive layer; forming a photo resist pattern for exposing a first etching surface disposed on the first conductive layer of the upper surface of the insulating layer and a second etching surface disposed on the second conductive layer, in which a distance between the second etching surface and the second conductive layer is longer than a distance between the first etching surface and the first conductive layer; first etching the insulating layer with a first etch rate; and second etching the insulating layer with a second etch rate higher than the first etch rage after exposing the first conductive layer onto the insulating layer.</p> |
