OXIDE SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR ELEMENT, DISPLAY DEVICE, AND IMAGE SENSOR

摘要

PROBLEM TO BE SOLVED: To secure operation stability during light irradiation, and to enhance a protection function of an oxide semiconductor layer while suppressing a manufacturing cost.SOLUTION: An oxide semiconductor element 10 comprises: an electrode composed of a metallic material of any of electrodes 14, 20, and 22; an oxide semiconductor layer 18 including at least one selected from In, Zn, Ga, and Sn; and a protective layer 24 laminated in the oxide semiconductor layer 18 and composed of an inorganic insulating layer 26 and the same metallic material as the electrodes.