SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of improving switching characteristics while suppressing a decrease in drain current, and a method for manufacturing the same.SOLUTION: A silicon carbide substrate 10 is prepared which includes a first impurity region 17, a well region 13, and a second impurity region 14 separated from the first impurity region 17 by the well region 13. A silicon dioxide layer 15 is formed which is in contact with the first impurity region 17 and the well region 14. A gate electrode 27 is formed on the silicon dioxide layer 15. A material 22 containing silicon is formed on the first impurity region 17. The material 22 containing the silicon is oxidized. The silicon dioxide layer 15 includes a first silicon dioxide region 15a on the first impurity region 17 and a second silicon dioxide region 15b on the well region 13. The thickness T1 of the first silicon dioxide region 15a is greater than the thickness T2 of the second silicon dioxide region 15b.