| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure for relaxing field concentration and inhibits increase in device size and increase in the number of manufacturing processes.SOLUTION: A semiconductor device comprises: a first conductivity type semiconductor base substrate including a silicon carbide substrate, in which an element region and an outer peripheral region which surrounds the element region are defined on a principal surface; a second conductivity type main junction part which is buried in a part of an upper part of the semiconductor base substrate in a boundary region between the element region and the outer peripheral region so as to surround the element region and forms a pn junction with the semiconductor base substrate; a plurality of resurf regions multiply arranged in the outer peripheral region and at a distance from each other, each including at least one guard ring which surrounds the main junction part and is buried in an upper part of the peripheral region; and a short-circuit part for electrically short-circuiting the main junction part and guard rings in the plurality of resurf regions with each other. |
