LOW VOLTAGE EMBEDDED MEMORY HAVING CATIONIC-BASED CONDUCTIVE OXIDE ELEMENT

摘要

Low voltage embedded memory having cationic-based conductive oxide elements is described. For example, a material layer stack for a memory element includes a first conductive electrode. A cationic-based conductive oxide layer is disposed on the first conductive electrode. The cationic-based conductive oxide layer has a plurality of cation vacancies therein. A second electrode is disposed on the cationic-based conductive oxide layer.