| 摘要 |
The present invention relates a method for controlling the temperatures of a semiconductor and LCD manufacturing process facilities using gas as a medium. More particularly, the present invention relates to a method for controlling the temperatures of a semiconductor and LCD manufacturing process facilities using gas as a medium, which includes first and second circulation steps. The first circulation step includes the sub-steps of: introducing a predetermined working fluid discharged from the process facilities into a compressor through a first transfer line; discharging the working fluid introduced into the compressor and pressed at a high temperature and high pressure and introducing the working fluid into a condenser through a second transfer line; discharging the working fluid introduced into the condenser and condensed and introducing the working fluid to a first electronic expansion valve through a third transfer line; and introducing the working fluid introduced into the first electronic expansion valve and adiabatic expanded to the process facilities through a fourth transfer line. The second circulation step includes the sub-steps of: branching the working fluid transferred through the second transfer line and pressed at the high temperature and high pressure and introducing the working fluid into a second electronic expansion valve through a fifth transfer line; and transferring the working fluid introduced into the second electronic expansion valve and adiabatic expanded through a sixth transfer line and introducing the working fluid through the fourth transfer line. According to the present invention, the temperatures can be controlled by using gas for the semiconductor and the LCD manufacturing process facilities so that power consumption and maintenance costs can be saved when comparing with a conventional temperature control scheme using liquid. |
