| 摘要 |
The present invention relates to a vapor deposition device. The vapor deposition device comprises a reaction chamber which accommodates a substrate; a first gas nozzle which is installed at the reaction chamber and injects inert gas; a gas injection unit which has a second gas nozzle injecting reaction gas; a gas reaction unit which is installed at the first gas nozzle and makes the inert gas react to convert the inert gas floating through the first gas nozzle into activated atoms and inject the activated atoms through the first gas nozzle. The reaction gas is injected from the second gas nozzle to the flow path of the activated atoms and forms a thin film on the substrate by being activated through the reaction with the activated atoms. As a result, the present invention improves the deposition efficiency of the reaction gas and obtains stable deposition reaction by maintaining the activation state of the reaction gas in a process. |
