| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance light-emitting element having reduced luminous unevenness.SOLUTION: The light-emitting element includes: a semiconductor structure layer 11 including a stack of a first semiconductor layer 17 of a first conductivity type, an active layer 15 and a second semiconductor layer 13 of a second conductivity type in this order; an electrode 19 formed on the first semiconductor layer; a diffusion electrode layer 25 formed on the second semiconductor layer; and a reflective layer 27 formed on the diffusion electrode layer. The diffusion electrode layer includes ohmic portions formed on the second semiconductor layer and forming ohmic junction with the second semiconductor layer, and non-ohmic portions 23 penetrating thorough the ohmic portions and forming non-ohmic junction with the second semiconductor layer. The non-ohmic portions include first non-ohmic portions spaced apart from one another and formed in a dot shape. Any of the ohmic portions and the non-ohmic portions are transparent to light from the active layer. |
