| 发明名称 |
Memory Device And Method For Making Same |
| 摘要 |
Embodiments relate to a method of forming a memory array,comprising: forming a collector layer; forming a plurality of collector regions in the collector layer; forming a plurality of base regions over the collector region; forming a plurality of emitter regions over the base regions; forming a plurality of memory elements over the emitter regions, wherein the collector regions, base regions and emitter regions form heterojunction bipolar transistors. |
| 申请公布号 |
US2014154857(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201313924635 |
申请日期 |
2013.06.24 |
| 申请人 |
TILKE Armin |
发明人 |
TILKE Armin |
| 分类号 |
H01L29/66;H01L27/24 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a memory array,comprising:
forming a collector layer; forming a plurality of collector regions in said collector layer; forming a plurality of base regions over said collector region; forming a plurality of emitter regions over said base regions; forming a plurality of memory elements over said emitter regions,wherein said collector regions, base regions and emitter regions form heterojunction bipolar transistors.
|
| 地址 |
Dresden DE |
