| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device includes a bit line; two or more word lines; and a memory cell including two or more sub memory cells that each include a transistor and a capacitor. One of a source and a drain of the transistor is connected to the bit line, the other of the source and the drain of the transistor is connected to the capacitor, a gate of the transistor is connected to one of the word lines, and each of the sub memory cells has a different capacitance of the capacitor. |
| 申请公布号 |
US2014153319(A1) |
申请公布日期 |
2014.06.05 |
| 申请号 |
US201414171812 |
申请日期 |
2014.02.04 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Saito Toshihiko |
| 分类号 |
G11C11/404 |
主分类号 |
G11C11/404 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a bit line; a plurality of word lines; and a memory cell comprising a plurality of sub memory cells, the sub memory cells each comprising a transistor and a capacitor, wherein one of a source and a drain of the transistor is electrically connected to the bit line, wherein the other of the source and the drain of the transistor is electrically connected to the capacitor, wherein a gate of the transistor is electrically connected to one of the plurality of word lines, and wherein capacitances of the capacitors in the plurality of sub memory cells are different from each other.
|
| 地址 |
Atsugi-shi JP |
