TUNGSTEN NUCLEATION PROCESS TO ENABLE LOW RESISTIVITY TUNGSTEN FEATURE FILL

摘要

Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers.

主权项

1. A method of filling a feature on a substrate with tungsten, the method comprising:
prior to depositing a bulk tungsten layer, forming a tungsten nucleation layer by exposing the feature to alternating pulses of a germanium-containing reducing agent and a tungsten-containing precursor.