发明名称 |
SEMICONDUCTOR APPARATUS |
摘要 |
A semiconductor apparatus includes a semiconductor chip formed with cut fuses over one surface thereof; and migration preventing modules preventing occurrence of a phenomenon in which metal ions of the fuses migrate to cut zones of the fuses; each migration preventing module including: a ground electrode formed in the semiconductor chip to face the fuse with a first insulation member interposed therebetween; a floating electrode formed over the fuse with a second insulation member interposed therebetween to face the ground electrode with the fuse interposed therebetween; and a power supply electrode formed over the floating electrode with a third insulation member interposed therebetween. |
申请公布号 |
US2014151842(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201313803200 |
申请日期 |
2013.03.14 |
申请人 |
SK HYNIX INC. |
发明人 |
KIM Jae Min;PARK Myung Gun |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor apparatus comprising:
a semiconductor chip formed with cut fuses; and migration preventing modules formed to substantially face the cut fuses, respectively; wherein the each migration preventing module comprising:
a ground electrode formed in the semiconductor chip to substantially face the fuse with a first insulation member interposed therebetween;a floating electrode formed over the fuse with a second insulation member interposed therebetween to substantially face the ground electrode with the fuse interposed therebetween; anda power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.
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地址 |
Icheon-si KR |