发明名称 SEMICONDUCTOR APPARATUS
摘要 A semiconductor apparatus includes a semiconductor chip formed with cut fuses over one surface thereof; and migration preventing modules preventing occurrence of a phenomenon in which metal ions of the fuses migrate to cut zones of the fuses; each migration preventing module including: a ground electrode formed in the semiconductor chip to face the fuse with a first insulation member interposed therebetween; a floating electrode formed over the fuse with a second insulation member interposed therebetween to face the ground electrode with the fuse interposed therebetween; and a power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.
申请公布号 US2014151842(A1) 申请公布日期 2014.06.05
申请号 US201313803200 申请日期 2013.03.14
申请人 SK HYNIX INC. 发明人 KIM Jae Min;PARK Myung Gun
分类号 H01L23/525 主分类号 H01L23/525
代理机构 代理人
主权项 1. A semiconductor apparatus comprising: a semiconductor chip formed with cut fuses; and migration preventing modules formed to substantially face the cut fuses, respectively; wherein the each migration preventing module comprising: a ground electrode formed in the semiconductor chip to substantially face the fuse with a first insulation member interposed therebetween;a floating electrode formed over the fuse with a second insulation member interposed therebetween to substantially face the ground electrode with the fuse interposed therebetween; anda power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.
地址 Icheon-si KR