| 摘要 |
The disclosure relates to a semiconductor light emitting device configured to comprise a plurality of semiconductor layers which have a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light through the recombination of electrons and holes, wherein the first semiconductor layer, the second semiconductor layer, and the active layer are sequentially grown by using a growth substrate; and a non-conductive reflective film formed on the second semiconductor layer to reflect the light to the first semiconductor layer side which is a growth substrate side from the active layer and provided with an inclined surface formed in the edge thereof. |
