| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method capable of suppressing a scratch and an SOI film thickness abnormality produced by a warp shape between the SOI wafer produced when peeled off by an ion implantation peeling method and a bond wafer after peeling off.SOLUTION: The SOI wafer manufacturing method includes: forming an oxide film on a bond wafer constituted by a semiconductor single crystal substrate; forming an ion implantation layer on the bond wafer by ion implanting at least one type of gas ions out of hydrogen and an inert gas through the oxide film; and after laminating the ion-implanted surface of the bond wafer with a base wafer surface through the oxide film, peeling off the bond wafer at the ion implantation layer. In regard to the oxide film formed on the bond wafer, a back-face oxide film is made thicker than an oxide film on the laminating surface. |
