| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce influence of current leaking from a reset transistor to a photoelectric conversion element, and provide a driving method of the semiconductor device.SOLUTION: A semiconductor device comprises a reset transistor, a photoelectric conversion element, a reset-side power source line and a diode-side power source line. In the semiconductor device, a gate terminal of the reset transistor is connected to a reset signal line, one terminal of the photoelectric conversion element is electrically connected with the diode-side power source line, and the other terminal is connected with the reset-side power source line via the reset transistor, and when the reset transistor is in a non-conductive state, potential of the reset-side power source line is brought closer to potential of the diode-side power source line.</p> |
