| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem of various method proposed for preventing crack from reaching a seal ring on the periphery of a chip, because reliability problem is caused when the crack occurring due to chip division processing, such as dicing, exceeds the seal ring that the process cost increases because these methods require an additional processing.SOLUTION: A semiconductor integrated circuit device has an upper layer embedded wiring layer on a multilayer embedded wiring layer, and a metal seal ring of ring-shape along the end of a semiconductor substrate. The upper layer embedded wiring layer has a lower layer main insulating film, an etching stop insulation layer and an upper layer main insulating film thereon. In a region on the outside of the metal seal ring, the opening of the etching stop insulation layer is provided along the region, and a crack induction ring having an air gap is provided in the upper layer main insulating film embedded region constituted of a recess in the upper surface of the underlying lower layer main insulating film. |
