发明名称 ELECTRODE FOR USE IN DISPLAY DEVICE OR INPUT DEVICE, AND SPUTTERING GATE FOR FORMING ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide an electrode structure having excellent electrical resistivity, high reflectivity comparable to an Ag alloy film (single layer), and facilitating high accuracy microfabrication.SOLUTION: An electrode for use in a display device or an input device has a laminated film including a first layer composed of an Al alloy and formed on the substrate side, and a second layer formed thereon and composed of an Ag alloy. The electrode has a thickness of 100-800 nm, the second layer has a thickness of 60-480 nm, the thickness ratio of the second layer occupying the thickness of the electrode is 10-70%, and the thickness ratio of the first layer occupying the thickness of the electrode is 30% or more. The Al alloy contains, as an alloy element, a predetermined amount of at least one kind selected from a group consisting of: rare earth element; at least one kind selected from a group consisting of Si, Cu, and Ge; and at least one kind selected from a group consisting of Ti, Ta, W and Nb.
申请公布号 JP2014103312(A) 申请公布日期 2014.06.05
申请号 JP20120255360 申请日期 2012.11.21
申请人 KOBELCO KAKEN:KK;KOBE STEEL LTD 发明人 OKUNO HIROYUKI;NAKAI JUNICHI;GOTO YASUSHI;TAUCHI HIRONORI;SHIDA YOKO;IWANARI YUMI
分类号 H01L21/3205;C22C5/06;C22C5/08;C22C21/00;C23C14/34;H01L21/28;H01L21/285;H01L21/768;H01L23/532;H01L29/786;H01L51/50;H05B33/10;H05B33/14;H05B33/26 主分类号 H01L21/3205
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