DISLOCATION ENGINEERING USING A SCANNED LASER

摘要

A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

主权项

1. A method for manipulating dislocations from a semiconductor device, comprising:
directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, wherein manipulating the plurality of dislocations comprises directly scanning the plurality of dislocations with the light-emitting beam to manipulate a location of each of the plurality of dislocations on the surface portion of the semiconductor body by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the laser beam.