| 摘要 |
<p>In a semiconductor device and a manufacturing method thereof, an interlayer insulating film including contact holes which expose a part of a substrate surface is formed on a substrate in a first region. Contact plugs, on which a first barrier metal film pattern and a first metal film pattern are laminated, are formed inside the contact holes. Second metal film patterns are directly in contact with the contact plugs and the upper surface of the interlayer insulating film, and are made of a metal material. The height of a wiring structure of the semiconductor device is low so that the parasitic capacitance is reduced.</p> |
