发明名称 ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 An elastic wave device propagating plate waves includes a stack of an acoustic reflection layer, a piezoelectric layer, and IDT electrode on a supporting substrate. The piezoelectric layer is thinner than a period of fingers of the IDT electrode. The acoustic reflection layer includes low-acoustic-impedance layers and high-acoustic-impedance layers. The low-acoustic-impedance layers are made of SiO2, and the high-acoustic-impedance layers are made of at least one material selected from the group consisting of W, LiTaO3, Al2O3, AlN, LiNbO3, SiN, and ZnO.
申请公布号 US2014152146(A1) 申请公布日期 2014.06.05
申请号 US201313920344 申请日期 2013.06.18
申请人 Murata Manufacturing Co., Ltd. 发明人 KIMURA Tetsuya;OGAMI Takashi;DAIMON Katsuya
分类号 H03H9/02;H03H3/02;H01L41/18 主分类号 H03H9/02
代理机构 代理人
主权项 1. An elastic wave device propagating plate waves, comprising: a supporting substrate; an acoustic reflection layer on the supporting substrate; a piezoelectric layer on the acoustic reflection layer; and an IDT electrode on an upper or lower surface of the piezoelectric layer, the piezoelectric layer being thinner than a period of fingers of the IDT electrode; wherein the acoustic reflection layer includes a low-acoustic-impedance layer and a high-acoustic-impedance layer having a higher acoustic impedance than an acoustic impedance of the low-acoustic-impedance layer; and the low-acoustic-impedance layer is made of SiO2, and the high-acoustic-impedance layer is made of at least one material selected from the group consisting of W, LiTaO3, Al2O3, AlN, LiNbO3, SiN, and ZnO.
地址 Nagaokakyo-shi JP