发明名称 |
ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An elastic wave device propagating plate waves includes a stack of an acoustic reflection layer, a piezoelectric layer, and IDT electrode on a supporting substrate. The piezoelectric layer is thinner than a period of fingers of the IDT electrode. The acoustic reflection layer includes low-acoustic-impedance layers and high-acoustic-impedance layers. The low-acoustic-impedance layers are made of SiO2, and the high-acoustic-impedance layers are made of at least one material selected from the group consisting of W, LiTaO3, Al2O3, AlN, LiNbO3, SiN, and ZnO. |
申请公布号 |
US2014152146(A1) |
申请公布日期 |
2014.06.05 |
申请号 |
US201313920344 |
申请日期 |
2013.06.18 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
KIMURA Tetsuya;OGAMI Takashi;DAIMON Katsuya |
分类号 |
H03H9/02;H03H3/02;H01L41/18 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
1. An elastic wave device propagating plate waves, comprising:
a supporting substrate; an acoustic reflection layer on the supporting substrate; a piezoelectric layer on the acoustic reflection layer; and an IDT electrode on an upper or lower surface of the piezoelectric layer, the piezoelectric layer being thinner than a period of fingers of the IDT electrode; wherein the acoustic reflection layer includes a low-acoustic-impedance layer and a high-acoustic-impedance layer having a higher acoustic impedance than an acoustic impedance of the low-acoustic-impedance layer; and the low-acoustic-impedance layer is made of SiO2, and the high-acoustic-impedance layer is made of at least one material selected from the group consisting of W, LiTaO3, Al2O3, AlN, LiNbO3, SiN, and ZnO.
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地址 |
Nagaokakyo-shi JP |