Inducing Channel Stress in Semiconductor-on-Insulator Devices by Base Substrate Oxidation

摘要

Embodiments include semiconductor-on-insulator (SOI) substrates having SOI layers strained by oxidation of the base substrate layer and methods of forming the same. The method may include forming a strained channel region in a semiconductor-on-insulator (SOI) substrate including a buried insulator (BOX) layer above a base substrate layer and a SOI layer above the BOX layer by first etching the SOI layer and the BOX layer to form a first isolation recess region and a second isolation recess region. A portion of the SOI layer between the first isolation recess region and the second isolation recess region defines a channel region in the SOI layer. A portion of the base substrate layer below the first isolation recess region and below the second isolation recess region may then be oxidized to form a first oxide region and a second oxide region, respectively, that apply compressive strain to the channel region.

主权项

1. A method of forming a strained channel region in a semiconductor-on-insulator (SOI) substrate including a buried insulator (BOX) layer above a base substrate layer and a SOI layer above the BOX layer, the method comprising:
etching the SOI layer and the BOX layer to form a first and a second isolation recess region, wherein a portion of the SOI layer between the first and the second isolation recess region defines a channel region in the SOI layer; and oxidizing a portion of the base substrate layer below the first and the second to form a first and a second oxide region, wherein the first and the second oxide region apply compressive strain to the channel region.