| 摘要 |
<p>A method for fabricating a passivation film (1) on a crystalline silicon surface (2), the passivation film (1) comprising aluminium oxide AIOx, comprises providing an existing crystalline silicon surface (2) in a reaction space; depositing in the reaction space a first passivation layer (3) on the existing silicon surface, wherein the existing silicon surface with the deposit already formed thereon is alternately exposed to surface reactions of at least one first precursor for aluminium and at least one first precursor for oxygen; and depositing in the reaction space a second passivation layer (4) on the first passivation layer, wherein the first passivation layer with the deposit already formed thereon is alternately exposed to surface reactions of at least one second precursor for aluminium and at least one second precursor for oxygen. According to the invention, the at least one first precursor for oxygen comprises ozone O3.</p> |
