| 摘要 |
According to an embodiment, a light emitting device comprises a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a first electrode positioned on the first conductivity-type semiconductor layer exposed as a portion of the light emitting structures is etched; and a second electrode positioned on the second conductivity-type semiconductor layer, wherein the first conductivity-type semiconductor layer includes insertion layers including a first layer containing an Inx1Aly1Ga1-x1-y1N (0<=x1<x1<y1<1) material and a second layer containing an Inx2Ga1-x2N (0<x2<1) material, and a difference in lattice constant between the first layer and the second layer ranges from 0.12% to 1.83%. |
