| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of detecting a contamination degree of a vapor phase growth apparatus with high sensitivity.SOLUTION: First, a silicon wafer to be a base plate of a semiconductor wafer for contamination evaluation is prepared (S1), and the silicon wafer is carried in to a reactor of a vapor phase growth apparatus of an evaluation target (S2). Then, HCl gas is simultaneously flown in the reactor together with material gas (TCS gas) and carrier gas, and an epitaxial layer is vapor-phase grown on the silicon wafer (S3), and a silicon epitaxial wafer for contamination evaluation is manufactured. At this time, the flow ratio of the HCl gas (HCI gas flow quantity/material gas flow quantity) to the material gas should be 0.01-0.5. After that, the manufactured silicon epitaxial wafer for contamination evaluation is taken out from the reactor (S4), and a lifetime value of the taken-out silicon epitaxial wafer is measured (S5). Finally, a contamination degree of the vapor phase growth apparatus of the evaluation target is evaluated from the measured lifetime value.</p> |
